PART |
Description |
Maker |
UPA2752GR UPA2752GR-E1 UPA2752GR-E2 |
Nch enhancement-type MOSFET (Dual type) SWITCHING N- AND P-CHANNEL POWER MOS FET SWITCHING N-CHANNEL POWER MOSFET
|
NEC[NEC]
|
2SJ324 2SJ324-Z-T1 2SJ324-Z-E2 2SJ324-Z-T2 2SJ324- |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE P-channel enhancement type
|
NEC Corp.
|
RJK03P6DPA RJK03P6DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03P0DPA RJK03P0DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
UPA1774G |
SWITCHING DUAL P-CHANNEL POWER MOSFET
|
NEC[NEC]
|
OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6D package 400V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6E package 1000V Dual N-Channel MOSFET in a S-6E package SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6 400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier Electronic Theatre Controls, Inc. Atmel, Corp.
|
HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8 Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc. Renesas Electronics Corporation
|
UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET 42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
M74HC352B1R M74HC353M1R M54HC352 M54HC352B1R M54HC |
HC353: DUAL 4 CHANNEL MULTIPLEXER 3 STATE OUTPUT(INV.) HC352: DUAL 4 CHANNEL MULTIPLEXER(INV.) HC353: DUAL 4 CHANNEL MULTIPLEXER 3 STATEOUTPUTINV. HC352: DUAL 4 CHANNEL MULTIPLEXERINV. 12-Bit, 2.5 us Dual DAC, Serial Input, Programmable Settling Time, M temperature 8-CDIP -55 to 125 VDSL Codec 80-LQFP -40 to 85 12-Bit, Single Channel DAC, Parallel, Voltage Out, Low Power, Asynchronous Update 20-SOIC 0 to 70
|
SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
RJK0368DPA-00-J0 RJK0368DPA10 |
20 A, 30 V, 0.0224 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
HAT1093C-EL-E HAT1095C-EL-E HAT1095C HAT1093C |
2000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Silicon P Channel MOSFET Power Switching Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|